Infineon · FETs & Power MOSFETs · MPN BSC123N10LSGATMA1
No reviews yet — be the first to review Infineon BSC123N10LSGATMA1.
| Gate Charge(Qg) | 68nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 71A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 114W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 12.3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.9nF |
N-Channel 100V 71A 114W Surface Mount TDSON-8