Infineon BSC123N08NS3G

Infineon · FETs & Power MOSFETs · MPN BSC123N08NS3G

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Specifications

Configuration-
Gate Charge(Qg)25nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)517pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation66W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)12.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.87nF

Technical details

N-Channel 80V 55A 66W Surface Mount TDSON-8(5x6)

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