Infineon BSC119N03MSCG

Infineon · FETs & Power MOSFETs · MPN BSC119N03MSCG

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)39A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)13.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

30V 39A 2V 28W 13.9mΩ@4.5V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS

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