Infineon · FETs & Power MOSFETs · MPN BSC112N06LDATMA1
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| Current - Continuous Drain(Id) | 57A |
|---|---|
| Pd - Power Dissipation | 65W |
| RDS(on) | 15.8mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.02nF |
| Gate Charge(Qg) | 55nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 770pF |
N-Channel Array 60V 57A 65W Surface Mount TDSON-8