Infineon BSC110N06NS3G

Infineon · FETs & Power MOSFETs · MPN BSC110N06NS3G

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)590pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)17pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF
TypeN-Channel

Technical details

N-Channel 60V 50A 50W Surface Mount TDSON-8(5x6)

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