Infineon BSC109N10NS3G

Infineon · FETs & Power MOSFETs · MPN BSC109N10NS3G

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)63A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)22mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)2.5nF
TypeN-Channel

Technical details

N-Channel 100V 63A 78W Surface Mount TDSON-8(5x6)

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