Infineon BSC100N03MSG

Infineon · FETs & Power MOSFETs · MPN BSC100N03MSG

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Specifications

Gate Charge(Qg)23nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)590pF
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation30W
RDS(on)12mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)27pF
Number1 N-channel
Input Capacitance(Ciss)1.7nF
TypeN-Channel

Technical details

N-Channel 30V 44A 30W Surface Mount TDSON-8

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