Infineon BSC0996NS

Infineon · FETs & Power MOSFETs · MPN BSC0996NS

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Specifications

Gate Charge(Qg)7.2nC@4.5V
Drain to Source Voltage34V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

34V 13A 2V 2.5W 9mΩ@4.5V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

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