Infineon BSC096N10LS5ATMA1

Infineon · FETs & Power MOSFETs · MPN BSC096N10LS5ATMA1

No reviews yet — be the first to review Infineon BSC096N10LS5ATMA1.

Specifications

Gate Charge(Qg)14.6nC@4.5V
Drain to Source Voltage100V
Output Capacitance(Coss)320pF
Current - Continuous Drain(Id)72A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)9.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF
TypeN-Channel

Technical details

N-Channel 100V 72A 83W Surface Mount TDSON-8

Related FETs & Power MOSFETs