Infineon BSC0925ND

Infineon · FETs & Power MOSFETs · MPN BSC0925ND

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Specifications

Current - Continuous Drain(Id)40A
Pd - Power Dissipation30W
RDS(on)4.2mΩ@10V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)49pF
Number2 N-Channel
Input Capacitance(Ciss)1.157nF
Gate Charge(Qg)13nC@10V
Operating Temperature-55℃~+150℃

Technical details

40A 30W 4.2mΩ@10V 2V 2 N-Channel TISON-8-EP(6x5) FET, MOSFET Arrays RoHS

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