Infineon · FETs & Power MOSFETs · MPN BSC0911ND
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 40A |
| RDS(on) | 1.2mΩ@10V |
| Pd - Power Dissipation | 2.5W |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Drain to Source Voltage | 25V |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.6nF |
| Gate Charge(Qg) | 12nC@10V |
| Operating Temperature | -55℃~+150℃ |
40A 1.2mΩ@10V 2.5W 1.2V 2 N-Channel TISON-8-EP(6x5) FET, MOSFET Arrays RoHS