Infineon · FETs & Power MOSFETs · MPN BSC0910NDIATMA1
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| Current - Continuous Drain(Id) | 40A |
|---|---|
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 5.9mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 25V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 4.5nF |
| Gate Charge(Qg) | 30.6nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 2.3nF |
N-Channel Array 25V 40A 2.5W Surface Mount TISON-8