Infineon BSC090N03LSGATMA1

Infineon · FETs & Power MOSFETs · MPN BSC090N03LSGATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18nC@10V
Current - Continuous Drain(Id)13A;48A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W;32W
RDS(on)9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.5nF

Technical details

N-Channel 30V 13A 48A 2.5W 32W Surface Mount TDSON-8

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