Infineon BSC0909NSATMA1

Infineon · FETs & Power MOSFETs · MPN BSC0909NSATMA1

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage34V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)11.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.5nF
TypeN-Channel

Technical details

N-Channel 34V 44A 27W Surface Mount TDSON-8

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