Infineon BSC0901NSIATMA1

Infineon · FETs & Power MOSFETs · MPN BSC0901NSIATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)54nC@10V
Output Capacitance(Coss)1.3nF
Current - Continuous Drain(Id)145A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)2.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.5nF
TypeN-Channel

Technical details

N-Channel 30V 145A 69W Surface Mount TDSON-8

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