Infineon BSC0901NS

Infineon · FETs & Power MOSFETs · MPN BSC0901NS

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)960pF
Current - Continuous Drain(Id)100A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)140pF
RDS(on)2.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 30V 100A 69W Surface Mount TDSON-8(5x6)

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