Infineon BSC084P03NS3GATMA1

Infineon · FETs & Power MOSFETs · MPN BSC084P03NS3GATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)58nC@10V
Output Capacitance(Coss)1.52nF
Current - Continuous Drain(Id)78.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)6.1mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.19nF
TypeP-Channel

Technical details

P-Channel 30V 78.6A 69W Surface Mount TDSON-8

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