Infineon · FETs & Power MOSFETs · MPN BSC084P03NS3E G
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| Gate Charge(Qg) | 57.7nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 78.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 8.4mΩ@6V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.24nF |
30V 78.6A 2V 69W 8.4mΩ@6V 1 P-Channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS