Infineon · FETs & Power MOSFETs · MPN BSC082N10LSGATMA1
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| Gate Charge(Qg) | 104nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 13.8A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 156W |
| RDS(on) | 8.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.4nF |
N-Channel 100V 13.8A 100A 156W Surface Mount TDSON-8