Infineon BSC080P03LS G

Infineon · FETs & Power MOSFETs · MPN BSC080P03LS G

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Specifications

Gate Charge(Qg)122.4nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.9nF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)1.8nF
RDS(on)8mΩ@10V
Number-
Input Capacitance(Ciss)6.14nF
TypeP-Channel

Technical details

30V 30A 2.2V 89W 8mΩ@10V P-Channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

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