Infineon · FETs & Power MOSFETs · MPN BSC080P03LS G
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| Gate Charge(Qg) | 122.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.9nF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8nF |
| RDS(on) | 8mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 6.14nF |
| Type | P-Channel |
30V 30A 2.2V 89W 8mΩ@10V P-Channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS