Infineon BSC080N03LS G

Infineon · FETs & Power MOSFETs · MPN BSC080N03LS G

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Specifications

Gate Charge(Qg)10nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)53A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.7nF

Technical details

N-Channel 30V 53A 35W Surface Mount TDSON-8(5x6)

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