Infineon · FETs & Power MOSFETs · MPN BSC0805LSATMA1
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| Gate Charge(Qg) | 16nC |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 79A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
N-Channel 100V 79A 2.5W Surface Mount TDSON-8