Infineon · FETs & Power MOSFETs · MPN BSC0803LSATMA1
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| Gate Charge(Qg) | 10nC@4.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10A;44A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 2.5W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 14.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
100V 2.3V 14.6mΩ@10V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS