Infineon · FETs & Power MOSFETs · MPN BSC079N10NS G
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| Gate Charge(Qg) | 87nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.9nF |
100V 100A 2V 156W 7.9mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS