Infineon BSC076N06NS3 G

Infineon · FETs & Power MOSFETs · MPN BSC076N06NS3 G

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)660pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4nF
Vgs±20V

Technical details

60V 50A 3V 69W 7.6mΩ@10V 1 N-channel N-Channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

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