Infineon · FETs & Power MOSFETs · MPN BSC076N04ND
No reviews yet — be the first to review Infineon BSC076N04ND.
| Current - Continuous Drain(Id) | 20A |
|---|---|
| RDS(on) | 7.6mΩ@10V |
| Pd - Power Dissipation | 65W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 40V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.95nF |
| Gate Charge(Qg) | 38nC@20V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 670pF |
20A 7.6mΩ@10V 65W 4V 2 N-Channel TDSON-8-EP(5x6) FET, MOSFET Arrays RoHS