Infineon BSC070N10NS5

Infineon · FETs & Power MOSFETs · MPN BSC070N10NS5

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Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)28pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.7nF

Technical details

N-Channel 100V 80A 83W Surface Mount TDSON-8(5x6)

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