Infineon BSC060P03NS3EGATMA1

Infineon · FETs & Power MOSFETs · MPN BSC060P03NS3EGATMA1

No reviews yet — be the first to review Infineon BSC060P03NS3EGATMA1.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)81nC@10V
Output Capacitance(Coss)2.81nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)6mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)6.02nF

Technical details

P-Channel 30V 100A 83W Surface Mount TDSON-8

Related FETs & Power MOSFETs