Infineon BSC057N03MS G

Infineon · FETs & Power MOSFETs · MPN BSC057N03MS G

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

N-Channel 30V 71A 45W Surface Mount TDSON-8(5x6)

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