Infineon BSC057N03LS G

Infineon · FETs & Power MOSFETs · MPN BSC057N03LS G

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)5.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF

Technical details

30V 71A 2.2V 45W 5.7mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS

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