Infineon BSC050N04LS G

Infineon · FETs & Power MOSFETs · MPN BSC050N04LS G

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)85A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)3.7nF

Technical details

N-Channel 40V 85A 57W Surface Mount TDSON-8(5x6)

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