Infineon · FETs & Power MOSFETs · MPN BSC0503NSIATMA1
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| Gate Charge(Qg) | 7.1nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 36W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 3mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
30V 2V 36W 3mΩ@4.5V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS