Infineon BSC0501NSI

Infineon · FETs & Power MOSFETs · MPN BSC0501NSI

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)15.4nC@4.5V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)130A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)1.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.2nF
TypeN-Channel

Technical details

N-Channel 30V 130A 50W Surface Mount TDSON-8

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