Infineon BSC0500NSIATMA1

Infineon · FETs & Power MOSFETs · MPN BSC0500NSIATMA1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18nC@4.5V
Current - Continuous Drain(Id)186A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)1.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.3nF

Technical details

N-Channel 30V 186A 2.5W Surface Mount TDSON-8

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