Infineon · FETs & Power MOSFETs · MPN BSC047N08NS3G
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| Gate Charge(Qg) | 69nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 36pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
N-Channel 80V 100A 125W Surface Mount TDSON-8(5x6)