Infineon BSC042N03MS G

Infineon · FETs & Power MOSFETs · MPN BSC042N03MS G

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Specifications

Gate Charge(Qg)27nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)940pF
Current - Continuous Drain(Id)93A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.3nF
TypeN-Channel

Technical details

N-Channel 30V 93A 57W Surface Mount TDSON-8(5x6)

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