Infineon BSC036NE7NS3 G

Infineon · FETs & Power MOSFETs · MPN BSC036NE7NS3 G

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Specifications

Gate Charge(Qg)63.4nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)990pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)2.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.4nF
TypeN-Channel

Technical details

N-Channel 75V 156W Surface Mount TDSON-8

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