Infineon BSC032NE2LSATMA1

Infineon · FETs & Power MOSFETs · MPN BSC032NE2LSATMA1

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)21nC@10V
Output Capacitance(Coss)625pF
Current - Continuous Drain(Id)84A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W
RDS(on)4.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.596nF
TypeN-Channel

Technical details

N-Channel 25V 84A 2.5W Surface Mount TDSON-8

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