Infineon BSC031N06NS3 G

Infineon · FETs & Power MOSFETs · MPN BSC031N06NS3 G

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)11nF

Technical details

N-Channel 60V 100A 139W Surface Mount TDSON-8(5x6)

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