Infineon BSC030P03NS3G

Infineon · FETs & Power MOSFETs · MPN BSC030P03NS3G

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Specifications

Gate Charge(Qg)186nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)6.24nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.1V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)520pF
RDS(on)3mΩ@6V
Number1 P-Channel
Input Capacitance(Ciss)14nF
TypeP-Channel

Technical details

P-Channel 30V 100A 125W Surface Mount TDSON-8(5x6)

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