Infineon · FETs & Power MOSFETs · MPN BSC030N03MSGATMA1
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| Gate Charge(Qg) | 73nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 109A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 88pF |
| RDS(on) | 3.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.7nF |
N-Channel 30V 109A 2.5W Surface Mount TDSON-8