Infineon BSC030N03MSGATMA1

Infineon · FETs & Power MOSFETs · MPN BSC030N03MSGATMA1

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Specifications

Gate Charge(Qg)73nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)109A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)88pF
RDS(on)3.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)5.7nF

Technical details

N-Channel 30V 109A 2.5W Surface Mount TDSON-8

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