Infineon BSC0303LSATMA1

Infineon · FETs & Power MOSFETs · MPN BSC0303LSATMA1

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Specifications

Drain to Source Voltage120V
Gate Charge(Qg)51nC@10V
Output Capacitance(Coss)495pF
Current - Continuous Drain(Id)68A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation114W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)4.9nF
TypeN-Channel

Technical details

120V 68A 2.4V 114W 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS

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