Infineon · FETs & Power MOSFETs · MPN BSC0302LSATMA1
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| Gate Charge(Qg) | 79nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.4nF |
120V 2.4V 156W 8mΩ@10V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS