Infineon BSC029N025SG

Infineon · FETs & Power MOSFETs · MPN BSC029N025SG

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)41nC@5V
Output Capacitance(Coss)1.94nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)255pF
RDS(on)2.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.09nF
TypeN-Channel

Technical details

25V 100A 2V 78W 2.9mΩ@10V 1 N-channel N-Channel TDSON-8 Single FETs, MOSFETs RoHS

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