Infineon BSC027N10NS5

Infineon · FETs & Power MOSFETs · MPN BSC027N10NS5

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Specifications

Gate Charge(Qg)89nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)970pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)43pF
RDS(on)2.1mΩ@10V;2.6mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)6.3nF
TypeN-Channel

Technical details

N-Channel 100V 3W Surface Mount TDSON-8-EP(5x6)

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