Infineon BSC026NE2LS5

Infineon · FETs & Power MOSFETs · MPN BSC026NE2LS5

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage25V
Output Capacitance(Coss)530pF
Current - Continuous Drain(Id)82A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)38pF
RDS(on)4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 25V 82A 29W Surface Mount TDSON-8(5x6)

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