Infineon BSC026N08NS5ATMA1

Infineon · FETs & Power MOSFETs · MPN BSC026N08NS5ATMA1

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)74nC
Current - Continuous Drain(Id)184A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.8V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)66pF
RDS(on)2.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.8nF

Technical details

N-Channel 80V 184A 156W Surface Mount TDSON-8

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