Infineon · FETs & Power MOSFETs · MPN BSC026N02KSGAUMA1
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 52.7nC@4.5V |
| Current - Continuous Drain(Id) | 25A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 2.8W;78W |
| Reverse Transfer Capacitance (Crss@Vds) | 380pF |
| RDS(on) | 2.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.8nF |
20V 950mV 2.6mΩ@4.5V 1 N-channel TDSON-8 Single FETs, MOSFETs RoHS