Infineon · FETs & Power MOSFETs · MPN BSC019N08NS5ATMA1
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 117nC@10V |
| Output Capacitance(Coss) | 1.4nF |
| Current - Continuous Drain(Id) | 237A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 214W |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| RDS(on) | 2.5mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.6nF |
| Type | N-Channel |
80V 237A 3.8V 214W 2.5mΩ@6V 1 N-channel N-Channel TSON-8-EP(5x6) Single FETs, MOSFETs RoHS