Infineon BSC019N06NSATMA1

Infineon · FETs & Power MOSFETs · MPN BSC019N06NSATMA1

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Specifications

Gate Charge(Qg)77nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)192A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3.3V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)1.95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.25nF

Technical details

N-Channel 60V 192A 136W Surface Mount TDSON-8FL

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